Home

Produkte

Nicollian E. H.Brews J. R.

Mos (Metal Oxide Semiconductor) Physics and Technology

AutorNicollian E. H.Brews J. R.
QuelleSonstige Datenquellen
ISBN978-0-471-43079-7
Lieferbarkeitlieferbar
KatalogisatBasiskatalogisat
VerlagWiley
Erscheinungsdatum01.01.2002
Buch | Kartoniert
189,50 €
inkl. 7% MwSt.

Beschreibung (Langtext)

Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.

Weitere Titel wie 'Mos (Metal Oxide Semiconductor) Physics and Technology'

Ja, Cello!
Berger Julius
Buch | unbestimmt
19,90 €
inkl. 7% MwSt.
Kammermusik
Senfter Johanna
Buch | unbestimmt
159,00 €
inkl. 7% MwSt.
Jeder kann Saxonett
Hintermeier Barbara
Noten | Notenblatt
12,50 €
inkl. 7% MwSt.
Easy Charts
Noten | Notenblatt
17,50 €
inkl. 7% MwSt.